The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell.In this paper, double-heater, heat shield and composite argon duct system were introduced in the Ф450 mm hot zone of a Czochralski furnace.The pulling rate under different thermal system was recorded in experiments.Argon flow and temperature fields were simulated by finite element method(FEM).Experimental results and numerical simulation indicate that double-heater and composite argon duct system can enhance obviously the release rate of latent heat.In Φ 200 mm Czochralski silicon (CZSi) growth, average pulling rate can increase from 0.6 mm·min-1 in the conventional hot zone to 0.8 mm·min-1 in the modified hot zone.