Effects of cooling rate on the microstructure and electrical properties of Dy2O3-doped ZnO-based var
- 期刊名字:稀有金屬(英文版)
- 文件大小:
- 論文作者:LIU Hongyu,KONG Hui,JIANG Dong
- 作者單位:Department of Physics,College of Science,Shanghai Research Institute of Petrochemical Technology
- 更新時間:2023-02-08
- 下載次數:次
The microstmcture,electrical properties,and density of Dy2O3-doped ZnO-based varistor ceramics,prepared using high-energy ball milling (HEBM) and sintered at 800℃,were investigated by increasing the cooling rate in the order of H (slow cooling in furnace) → L (cooling in furnace) → K (cooling in air).With the increase in cooling rate,the grain size and density decreased,the breakdown voltage (V1 mA/mm) increased, and the nonlinear coefficient (α) and leakage current (IL) exhibited extremum.The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/mm, αof 20.3,IL of 5.2 μA,and density of 5.42 g/cm3.The barrier height (φB),donor concentration (Nd),density of the interface states (Ns),and barrier width (ω) all exhibited extremum during the alteration in cooling rate.The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate,led to the changes in the properties of varistor ceramics.
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