The nanocrystalline β-SiC powder was successfully synthesized by ball milling the Si-50%C elemental powder. During ball milling, a solid solution of C in Si, Si(C), firstly forms, followed by SiC. The formation of SiC is controlled by the mixing mechanism of the gradual diffusion reaction(GDR) and the mechanically induced self-propagating reaction(MSR). The amount of β-SiC increases with milling time increasing. After 40 h milling, there exists only β-SiC in the milled powder. The grain size of β-SiC is about 6.4 nm after the powder is milled for 60 h. After the 60 h-milled Si-50%C elemental powder is heat treated at 1 100 ℃ for 1 h, the grain size of β-SiC does not change, but the lattice ordering degree of β-SiC increases.