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Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high- Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-

Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-

  • 期刊名字:北京科技大學(xué)學(xué)報(英文版)
  • 文件大?。?/li>
  • 論文作者:Hongyu Liu,Xueming Ma,Dongmei
  • 作者單位:College of Science,Department of Physics
  • 更新時間:2023-02-08
  • 下載次數(shù):
論文簡介

Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling (HEBM) and low-temperature sintering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA,and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor concentration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.

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