Nanometer bismuth oxide produced by resistance heating vapor oxidation
- 期刊名字:中國有色金屬學(xué)會會刊(英文版)
- 文件大小:
- 論文作者:HU Han-xiang,QIU Ke-qiang
- 作者單位:School of Chemistry and Chemical Engineering,Department of Chemistry and Chemical Engineering
- 更新時間:2023-02-15
- 下載次數(shù):次
Bismuth oxide has wide applications in superconductive material, photoelectric material, electronic ceramic, electrolyte, and catalysts. To produce ultrafine bismuth oxide powders, some costly heating sources, such as plasma, high frequency induction, electron beam or laser, have to be used in the conventional vapor oxidation methods. The vapor oxidation method was improved by adding a reducing agent in the reaction system, where heating source was resistance tubular oven, instead of special heat source requirement. Nanometer bismuth oxide was prepared at 1 000-1 140 ℃, and the particle characteristics were investigated by XRD, SEM, DTA, laser sedimentograph. With low oxygen concentration (less than 20%) in the carrier gas, the bismuth oxide particle was near-sphere β-Bi2O3 with uniform and fine particle size (d0.5=65 nm, GSD=1.42); while with higher oxygen content (more than 50%), the powders were mixture of Bi2O2CO3 and β-Bi2O3.
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